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| w at * N-Channel .D *w wEnhancement mode * Logic Level Features * dv/dt rated SIPMOS (R) Small-Signal-Transistor Product Summary Drain source voltage Continuous drain current Sh a ee 4U t om .c Preliminary data BSP308 VDS ID 4 30 0.05 4.7 V A Drain-Source on-state resistance RDS(on) Type BSP308 Package SOT-223 Ordering Code Q67000-S4011 Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current T A = 25 C T A = 70 C Pulsed drain current T A = 25 C Reverse diode dv/dt I S = 4.7 A, V DS = 20 V, di/dt = 200 A/s, T jmax = 150 C Gate source voltage Power dissipation w w w t a .D S a e h ID U t4 e .c G m o 2 1 3 VPS05163 Pin 1 Pin 2/4 D PIN 3 S Value 4.7 3.9 Unit A ID puls dv/dt 18.8 6 kV/s VGS Ptot Tj , Tstg 20 1.8 -55...+150 55/150/56 V T A = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 w w w .D a aS t ee h om .c U 4C t W 1999-09-22 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. - BSP308 Unit max. 25 110 70 K/W K/W RthJS RthJA - Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 1.6 max. 2 A 0.1 10 10 0.05 0.03 1 100 100 0.075 0.05 nA V Unit V(BR)DSS VGS(th) IDSS 30 1.2 VGS = 0 V, I D = 250 A Gate threshold voltage, VGS = VDS I D = 20 A Zero gate voltage drain current VDS = 30 V, V GS = 0 V, Tj = 25 C VDS = 30 V, V GS = 0 V, Tj = 125 C Gate-source leakage current IGSS RDS(on) RDS(on) - VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, I D = 3.9 A Drain-Source on-state resistance VGS = 10 V, I D = 4.7 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-09-22 Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Transconductance typ. BSP308 Unit max. gfs Ciss Coss Crss td(on) 6.1 - 8.8 400 160 70 16 500 200 90 24 S pF VDS2*I D*RDS(on)max , ID = 3.9 A Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Rise time tr - 30 45 VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Turn-off delay time td(off) - 16 24 VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Fall time tf - 15 23 VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Page 3 1999-09-22 Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Gate to source charge typ. BSP308 Unit max. Qgs Qgd Qg V(plateau) - 1.9 5.4 14.5 3.1 2.9 8.1 22 - nC VDD = 24 V, ID = 4.7 A Gate to drain charge VDD = 24 V, ID = 4.7 A Gate charge total VDD = 24 V, ID = 4.7 A, VGS = 0 to 10 V Gate plateau voltage V VDD = 24 V , I D = 4.7 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. 0.84 38.4 22.3 max. 4.7 18.8 1.1 57.6 33.5 Unit IS ISM VSD trr Qrr - A T A = 25 C Inverse diode direct current,pulsed T A = 25 C Inverse diode forward voltage V ns nC VGS = 0 V, I F = 4.7 A Reverse recovery time VR = 15 V, IF=I S , di F/dt = 100 A/s Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/s Page 4 1999-09-22 Preliminary data Power Dissipation Drain current BSP308 Ptot = f (TA) BSP308 ID = f (TA ) BSP308 1.9 5.5 W 1.6 1.4 A 4.5 4.0 Ptot ID C 1.2 1.0 0.8 0.6 3.5 3.0 2.5 2.0 1.5 0.4 0.2 0.0 0 1.0 0.5 20 40 60 80 100 120 160 0.0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T A = 25 C 10 2 ZthJA = f(tp ) parameter : D = tp /T 10 2 /I D = BSP308 BSP308 A V D S n (o ) K/W tp = 160.0s 10 1 RD S 10 1 1 ms 10 0 10 ms Z thJA 10 0 D = 0.50 0.20 0.10 ID 10 -1 DC 10 -1 single pulse 0.05 0.02 0.01 10 -2 -1 10 10 0 10 1 V 10 2 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 5 tp 1999-09-22 Preliminary data Typ. output characteristics BSP308 Typ. drain-source-on-resistance I D = f (VDS) parameter: tp = 80 s BSP308 RDS(on) = f (ID ) parameter: VGS BSP308 12 Ptot = 1.80W VGS [V] a 2.0 b 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 0.16 b c A 10 9 8 ig lj k hd fe c d ID c e f g RDS(on) 0.12 0.10 7 6 5 4 3 2 b h i j k l 0.08 0.06 d e fg j h i lk b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 5.5 6.0 j 7.0 k l 8.0 10.0 0.04 0.02 VGS [V] = 1 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 A 8.5 VDS ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS 2 x I D x RDS(on)max parameter: tp = 80 s 10 gfs = f(ID); Tj=25C parameter: gfs 12 A 8 7 6 5 4 3 S 10 9 gfs 8 7 6 5 4 3 ID 2 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 1 5.0 0 0 1 2 3 4 5 6 7 A 9 VGS Page 6 ID 1999-09-22 Preliminary data Drain-source on-resistance Gate threshold voltage BSP308 RDS(on) = f (Tj) parameter : I D = 4.7 , V GS = 10 V BSP308 VGS(th) = f (Tj) parameter: VGS = VDS , ID = 20 A 3.0 0.12 0.10 V 2.4 RDS(on) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 -60 -20 20 60 100 C VGS(th) 0.09 2.2 2.0 1.8 1.6 1.4 1.2 98% typ 98% 2% typ 1.0 0.8 0.6 0.4 0.2 180 0.0 -60 -20 20 60 100 C 180 Tj Tj Typ. capacitances C = f(V DS) parameter: VGS=0 V, f=1 MHz 10 3 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 2 BSP308 A pF Ciss 10 1 C Coss 10 2 Crss IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 V VDS 5 10 15 20 25 30 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Page 7 1999-09-22 Preliminary data Typ. gate charge BSP308 Drain-source breakdown voltage VGS = f (Q Gate) parameter: ID = 4.7 A pulsed BSP308 V(BR)DSS = f (Tj ) BSP308 16 37 V V 35 12 V(BR)DSS 0,2 VDS max 0,8 VDS max 34 33 32 31 30 VGS 10 8 6 4 29 2 28 27 -60 0 0 2 4 6 8 10 12 14 16 18nC 21 -20 20 60 100 C 180 QGate Tj Page 8 1999-09-22 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP308 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 1999-09-22 |
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